Modeling and Characterization of RF and Microwave Power FETs
This 2007 book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.[7] A. Wood, C. Dragon, and W. Burger, aHigh performance silicon LDMOS technology for 2 GHz RF power amplifier applications, a in Int. Electron Devices Mtg. Tech. ... a device technology for high power RF infrastructure applications, a in Compound Semiconductor Integrated Circuit Symp. ... [16] K. Ebihara, K. Inoue , H. Haematsu, K. Yamaki, H. Takahashi, and J. Fukaya, aAn ultra-broad-band 300W GaAsanbsp;...
| Title | : | Modeling and Characterization of RF and Microwave Power FETs |
| Author | : | Peter Aaen, Jaime A. Plá, John Wood |
| Publisher | : | Cambridge University Press - 2007-06-25 |
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